npn TIP41-a-b-c 04/10/2012 comset semiconductors 1 | 4 semiconductors silicon power transistors they are epitaxial-base npn power transistors mounted in jedec to-220 plastic package. they are intended for use in medium pow er linear and switching applications. pnp complements are tip42-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP41 40 v TIP41a 60 TIP41b 80 TIP41c 100 v ceo collector-emitter voltage TIP41 40 v TIP41a 60 TIP41b 80 TIP41c 100 v ebo emitter-base voltage TIP41 5 v TIP41a TIP41b TIP41c i c collector current TIP41 6 a TIP41a TIP41b TIP41c i cm collector peak current TIP41 10 a TIP41a TIP41b TIP41c
npn TIP41-a-b-c 04/10/2012 comset semiconductors 2 | 4 semiconductors absolute maximum ratings symbol ratings value unit i b base current TIP41 2 a TIP41a TIP41b TIP41c p c power dissipation @ t c < 25 TIP41 65 watts TIP41a TIP41b TIP41c @ t a < 25 TIP41 2 TIP41a TIP41b TIP41c t j junction temperature TIP41 150 c TIP41a TIP41b TIP41c t s storage temperature range TIP41 -65 to +150 TIP41a TIP41b TIP41c thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base TIP41 1.92 c/w TIP41a TIP41b TIP41c r thj-a from junction to ambient in free air TIP41 62.5 c/w TIP41a TIP41b TIP41c
npn TIP41-a-b-c 04/10/2012 comset semiconductors 3 | 4 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ces collector cutoff current i e = 0, v ce = v ceo TIP41 - - 0.4 ma TIP41a TIP41b TIP41c i ceo collector cutoff current i b = 0, v ce = 30v TIP41 - - 0.7 ma TIP41a i b = 0, v ce = 60v TIP41b - - 0.7 TIP41c i ebo emitter cutoff current v eb = 5 v, i c = 0 TIP41 - - 1 ma TIP41a TIP41b TIP41c v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 TIP41 40 - - v TIP41a 60 - - TIP41b 80 - - TIP41c 100 - - v ce(sat) collector-emitter saturation voltage (*) i c = 6 a, i b = 600 ma TIP41 - - 1.5 v TIP41a TIP41b TIP41c v be(on) base-emitter voltage (*) i c = 6 a, v ce = 4 v TIP41 - - 2 v TIP41a TIP41b TIP41c h fe dc current gain (*) v ce = 4 v, i c = 0.3 a TIP41 30 - - - TIP41a TIP41b TIP41c v ce = 4 v, i c = 3 a TIP41 15 - 75 TIP41a TIP41b TIP41c h fe small signal current gain v ce = 10 v, i c = 0.5 a, f= 1khz TIP41 20 - - - TIP41a TIP41b TIP41c f t current gain-bandwidth product v ce = 10 v, i c = 0.5 a TIP41 3 - - mhz TIP41a TIP41b TIP41c (*) pulse width 300 s, duty cycle 2.0%
npn TIP41-a-b-c 04/10/2012 comset semiconductors 4 | 4 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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